DocumentCode
739705
Title
TCAD Studies on the Determination of Diffusion Length for the Planar-Collector EBIC Configuration With Any Size of the Schottky Contact
Author
Chee Chin Tan ; Ong, Vincent K. S. ; Radhakrishnan, K.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
62
Issue
9
fYear
2015
Firstpage
3100
Lastpage
3103
Abstract
In this brief, the transient single-contact electron-beam-induced current (SC-EBIC) and the conventional steady-state EBIC modes of the planar-collector configuration that were studied using a Technology Computer Aided Design device simulator are presented. The feasibility of these EBIC data in the extraction of the diffusion length of the planar-collector configuration with any values of surface recombination velocities and any size of the Schottky contact is also presented. The effect of the size of the Schottky contact on steady state and transient EBIC signals as well as the extracted diffusion length and linearization coefficient is discussed in this brief. The EBIC information obtained from the SC-EBIC and the conventional EBIC is found to be able to evaluate the diffusion length accurately regardless of the size of the Schottky contact.
Keywords
EBIC; Schottky barriers; semiconductor device measurement; surface recombination; technology CAD (electronics); Schottky contact; TCAD; diffusion length; planar-collector EBIC configuration; surface recombination velocities; technology computer aided design device simulator; transient single-contact electron-beam-induced current; Electron beams; Junctions; Radiative recombination; Schottky barriers; Steady-state; Transient analysis; Electron microscopy; semiconductor device measurement; semiconductor materials; simulation; simulation.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2458988
Filename
7180363
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