Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor

Author

El Hajjam, Khalil G. ; Bounouar, Mohamed Amine ; Baboux, Nicolas ; Ecoffey, Serge ; Guilmain, Marc ; Puyoo, Etienne ; Francis, Laurent A. ; Souifi, Abdelkader ; Drouin, Dominique ; Calmon, Francis

Author_Institution

Inst. Nat. des Sci. Appl. de Lyon, Lyon Nanotechnol. Inst., Villeurbanne, France

Volume

62

Issue

9

fYear

2015

Firstpage

2998

Lastpage

3003

Abstract

The development of metallic single-electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions (TJs). These TJs should insure high-ON current, low-OFF current, and low capacitance. We propose an engineered TJ based on multidielectric stacking. A number of high-k and low-k materials were considered to optimize the TJ´s characteristics. The optimized TJ is proven to increase the ION current and the I_ON/I_OFF ratio in a double-gate SET. Using TiO₂ plasma oxidation and Al₂O₃ atomic layer deposition, an SET proof of concept, with a double layer TJ, was fabricated and characterized.

Keywords

aluminium compounds; atomic layer deposition; high-k dielectric thin films; low-k dielectric thin films; oxidation; single electron transistors; titanium compounds; Al₂O₃; TiO₂; atomic layer deposition; double-gate SET; electrical properties; high-k materials; low-k materials; multidielectric stacking; optimized metallic single-electron transistor; plasma oxidation; tunnel junction downscaling; tunnel junction engineering; Aluminum oxide; Capacitance; Dielectrics; Electric potential; Junctions; Logic gates; Mathematical model; Multilayer tunnel dielectrics; single-electron transistor (SET); tunnel junction (TJ) engineering; tunnel junction (TJ) engineering.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2452575

Filename

7185376