Title :
Resonant tunnelling diode photodetector operating at near-infrared wavelengths with high responsivity
Author :
Yu Dong ; Jianxing Xu ; Guanglong Wang ; Haiqiao Ni ; Kangming Pei ; Jianhui Chen ; Fengqi Gao ; Baochen Li ; Zhichuan Niu
Author_Institution :
Lab. of Nanotechnol. & Microsyst., Mech. Eng. Coll., Shijiazhuang, China
Abstract :
Resonant tunnelling diode photodetectors with a 600 nm In0.53Ga0.47As absorption layer were fabricated by molecular beam epitaxy. The current-voltage characteristics of devices with different mesa diameters were tested and the negative differential resistance was observed in all devices. The responsivity of the detector was measured to be 4.19 × 105 A/W at 77 K and 1.92 × 104 A/W at room temperature under incident light with a power of 3.1 nW.
Keywords :
gallium arsenide; indium compounds; molecular beam epitaxial growth; photodetectors; resonant tunnelling diodes; In0.53Ga0.47As; absorption layer; current-voltage characteristics; molecular beam epitaxy; negative differential resistance; power 3.1 nW; resonant tunnelling diode photodetector; temperature 293 K to 298 K; temperature 77 K; wavelength 600 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.1041
