Title :
Experimentally verified drain-current model for variable barrier transistor
Author :
Moldovan, O. ; Lime, F. ; Barraud, S. ; Smaani, B. ; Latreche, S. ; Iñiguez, B.
Author_Institution :
Dept. of Electron., Electr. & Autom., Eng., Univ. Rovira & Virgili, Tarragona, Spain
Abstract :
A simple analytical model for the computation of the drain current in a new type of transistor is presented, the variable barrier transistor (VBT). A good agreement between the results and experimental data, from two different VBTs, proves the accuracy of this model. The experimental measurements show that the ION/IOFF ratio of this device can be improved, as compared with the classical transistor. The model correctly reproduces these results.
Keywords :
MOSFET; semiconductor device models; MOSFET; VBT; analytical model; drain-current model; experimental verification; metal-oxide-semiconductor field-effect transistor; variable barrier transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.1475
