Title :
High fT and fMAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate
Author :
Christy, P.D. ; Katayama, Y. ; Wakejima, A. ; Egawa, T.
Author_Institution :
Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Nagoya, Japan
Abstract :
A high current gain cutoff frequency (fT) of 90 GHz and a peak maximum oscillation frequency (fMAX) as high as 150 GHz are reported for a rectangular-shaped gate AlGaN/GaN high-electron mobility transistor (HEMT) on a high resistive silicon (HR-Si) substrate. The combined high fT/fMAX values for 100 nm unpassivated gate device demonstrate the high-quality heterostructure on silicon substrate. The reported high-performance RF device characteristics are comparable and even superior to the existing passivated AlGaN/GaN HEMTs of similar gate length. In addition, good DC characteristics have been recorded with the drain current density and an extrinsic transconductance of 0.6 A/mm and 157 mS/mm, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; wide band gap semiconductors; AlGaN-GaN; HR-Si substrate; RF device; Si; current density; frequency 150 GHz; frequency 90 GHz; high resistive silicon substrate; high-electron mobility transistor; maximum oscillation frequency; size 100 nm; unpassivated rectangular gate HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.1395
