Title :
Comment on “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”
Author :
Cheng-fu Chen ; Zhili Quan
Author_Institution :
Dept. of Mech. Eng., Univ. of Alaska at Fairbanks, Fairbanks, AK, USA
Abstract :
In the title paper, Janet al. applied the Kane-Mindlin theory to solve the strain field of a unit through silicon via (TSV) model in response to thermal loading ΔT. We comment on this paper by clarifying why the thermal strain αΔT cannot affect the mobility of electrons. We also demonstrate that a 2 × 2 TSV array would suffice to predict the maximum stress.
Keywords :
electron mobility; three-dimensional integrated circuits; strain field; thermal strain; through silicon vias; Analytical models; Arrays; Silicon; Strain; Stress; Thermal stresses; Through-silicon vias; Electron mobility; thermal strain; through silicon via (TSV); through silicon via (TSV).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2463256
