Characteristics of Polycrystalline Si Thin Film—Solid Solubility and Mobility Study

Author

Shu Qin

Author_Institution

Micron Technol. Inc., Boise, ID, USA

Volume

62

Issue

9

fYear

2015

Firstpage

2724

Lastpage

2729

Abstract

Carrier solid solubility (SS) and mobility of polycrystalline silicon (poly-Si) thin film as the functions of the doping ion species and annealing conditions (temperature and time) are characterized. The study of SS and mobility shows that the poly-Si thin film has lower chemical SS and electrically active SS and much lower mobility (μ) than a single-crystalline Si substrate, because polygrain boundaries dominate carrier scattering mechanism. For the poly-Si thin film, doping ion species show relatively less impact on SS and mobility data, but annealing thermal budgets (temperature and time) show more impact on SS and mobility data.

Keywords

annealing; carrier mobility; elemental semiconductors; grain boundaries; semiconductor doping; semiconductor thin films; silicon; solubility; Si; annealing; carrier scattering mechanism; carrier solid mobility; carrier solid solubility; doping ion species; polycrystalline silicon thin film; polygrain boundaries; single-crystalline substrate; Annealing; Cascading style sheets; Grain size; Implants; Impurities; Silicon; Temperature measurement; Grain boundary; mobility; polycrystalline silicon (poly-Si) thin film; polygrain size; solid solubility (SS); solid solubility (SS).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2454441

Filename

7202871