Characteristics of Polycrystalline Si Thin Film—Solid Solubility and Mobility Study

Carrier solid solubility (SS) and mobility of polycrystalline silicon (poly-Si) thin film as the functions of the doping ion species and annealing conditions (temperature and time) are characterized. The study of SS and mobility shows that the poly-Si thin film has lower chemical SS and electrically active SS and much lower mobility (μ) than a single-crystalline Si substrate, because polygrain boundaries dominate carrier scattering mechanism. For the poly-Si thin film, doping ion species show relatively less impact on SS and mobility data, but annealing thermal budgets (temperature and time) show more impact on SS and mobility data.