Title :
Piecewise-Linear Model With Transient Relaxation for Circuit-Level ESD Simulation
Author :
Kuo-Hsuan Meng ; Mertens, Robert ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
This work presents a new type of model, i.e., piecewise-linear model with transient relaxation (PWL-TR), to describe the nonlinear transient characteristics of electrostatic discharge (ESD) protection devices and circuits. The PWL-TR model represents the device as a finite-state machine; hence, no proprietary information is disclosed. The PWL-TR model offers accuracy comparable to a compact model but enables more computationally efficient simulation.
Keywords :
CMOS integrated circuits; electrostatic discharge; finite state machines; integrated circuit modelling; piecewise linear techniques; semiconductor device models; semiconductor diodes; thyristors; transients; ESD protection devices; PWL-TR model; circuit-level ESD simulation; electrostatic discharge; finite-state machine; nonlinear transient characteristics; piecewise-linear model; transient relaxation; Computational modeling; Electrostatic discharges; Hidden Markov models; Integrated circuit modeling; Semiconductor device modeling; Thyristors; Transient analysis; Circuit Simulation; Electrostatic Discharge (ESD); Electrostatic discharge (ESD); Finite State Machine; Piecewise-linear Model; Snapback; Transient Voltage Overshoot; circuit simulation; finite state machine; piecewise-linear model; snapback; transient voltage overshoot;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2015.2466436
