Sub-1100 nm lasing from post-growth intermixed InAs/GaAs quantum-dot lasers

Impurity free vacancy disordering induced highly intermixed InAs/GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ~1070-1190 nm. The non-coated facet Fabry-Pe̅rot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (~50 cm^-1), suitable for applications in frequency doubled green-yellow-orange laser realisation, gas sensing, metrology etc.