Title :
A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT
Author :
Mainali, Krishna ; Tripathi, Awneesh ; Madhusoodhanan, Sachin ; Kadavelugu, Arun ; Patel, Dhaval ; Hazra, Samir ; Hatua, Kamalesh ; Bhattacharya, Subhashish
Author_Institution :
Future Renewable Electrical Energy Delivery &..., North Carolina State University, Raleigh, NC 27695 USA
Abstract :
The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems.
Keywords :
Insulated gate bipolar transistors; Logic gates; MOSFET; Power harmonic filters; Silicon carbide;
Journal_Title :
Power Electronics Magazine, IEEE
DOI :
10.1109/MPEL.2015.2449271