Title :
Comprehensive Methodology for the Statistic of SRAM Vmin
Author :
Pompl, Thomas ; Strasser, Rudolf ; Drexl, Stefan ; Ostermayr, Martin
Author_Institution :
Intel Commun. GmbH, Neubiberg, Germany
Abstract :
In this paper, a comprehensive methodology for the statistic of SRAM Vmin is presented. A plotting method for the linearization of the statistical distributions is proposed, and methodologies for size scaling and statistical extrapolations are developed. Many analogies to the established statistical framework for time-dependent dielectric breakdown are found.
Keywords :
SRAM chips; statistical distributions; SRAM; comprehensive methodology; linearization; plotting method; size scaling; statistical extrapolations; time-dependent dielectric breakdown; Arrays; Density functional theory; Extrapolation; SRAM cells; Statistical analysis; Statistical distributions; Gumbel; SRAM; TDDB; Weibull; extreme value statistic;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2015.2429792
