DocumentCode :
742238
Title :
A Novel Voltage-Programmed Pixel Circuit Utilizing V_{T} -Dependent Charge-Transfer to Improve Stability of AMOLED Display
Author :
Maofeng Yang ; Papadopoulos, Nikolas P. ; Wong, William S. ; Sachdev, Manoj
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Volume :
9
Issue :
12
fYear :
2013
Firstpage :
957
Lastpage :
964
Abstract :
A novel voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix organic light-emitting diode (AMOLED) displays is proposed. The threshold voltage shift (ΔVT) of the drive TFT caused by electrical stress is compensated by an incremental gate-to-source voltage (ΔVGS) generated by utilizing the ΔVT-dependent charge transfer from the drive TFT to a TFT-based metal-insulator-semiconductor (MIS) capacitor. A second MIS capacitor is used to inject positive charge to the gate of the drive TFT to improve the OLED drive current. The non-ideality of the ΔVT-compensation, TFT overlap capacitance, programming speed, and OLED degradation are discussed. The effectiveness of the proposed pixel circuit is verified by simulation results.
Keywords :
LED displays; MIS capacitors; charge exchange; circuit stability; compensation; elemental semiconductors; hydrogen; organic light emitting diodes; silicon; thin film transistors; AMOLED display; MIS capacitor; Si:H; TFT overlap capacitance; VT-dependent charge-transfer; active-matrix organic light-emitting diode display; electrical stress compensation; hydrogenated amorphous silicon thin-film transistor; incremental gate-to-source voltage; metal-insulator-semiconductor capacitor; positive charge injection; stability; threshold voltage shift; voltage-programmed pixel circuit; Capacitance; Logic gates; Organic light emitting diodes; Programming; Simulation; Thin film transistors; Threshold voltage; Amorphous silicon (a-Si); active-matrix organic light-emitting diode (AMOLED); aging; compensation; pixel circuit; thin-film transistor (TFT);
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2013.2275172
Filename :
6571244
Link To Document :
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