• DocumentCode
    742243
  • Title

    A Resistor-Based Sub-1-V CMOS Smart Temperature Sensor for VLSI Thermal Management

  • Author

    Xian Tang ; Wai Tung Ng ; Kong-Pang Pun

  • Author_Institution
    Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong, China
  • Volume
    23
  • Issue
    9
  • fYear
    2015
  • Firstpage
    1651
  • Lastpage
    1660
  • Abstract
    This paper presents a novel low-voltage CMOS smart temperature sensor targeted for VLSI thermal management. A polyresistor is used as the sensing element and digitization is performed in the time domain. The proposed temperature-sensing concept can be realized with simple circuits that operate at low supply voltages, which are compatible with the digital circuits in VLSI systems. Fabricated in 90-nm CMOS, the sensor can operate with a supply voltage as low as 0.8 V and features a supply sensitivity of 4°C/V. After 50-sample moving-average and a two-point calibration at 25°C and 45°C, the design achieves an inaccuracy of -0.6°C/0.8°C over -40°C-125°C. It dissipates only 11.8 uW at a sampling rate of 5 kS/s from a 0.9-V nominal supply.
  • Keywords
    CMOS integrated circuits; VLSI; intelligent sensors; low-power electronics; temperature sensors; thermal management (packaging); CMOS; VLSI; polyresistor; power 11.8 muW; sensing element; size 90 nm; smart temperature sensor; temperature 25 C; temperature 45 C; thermal management; voltage 0.9 V; voltage 1 V; CMOS integrated circuits; Calibration; Resistors; Temperature sensors; Transistors; Very large scale integration; Calibration; low-voltage; resistor based; smart temperature sensor; time domain;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2348328
  • Filename
    6894618