DocumentCode
742684
Title
Graphene Transistors: Status, Prospects, and Problems
Author
Schwierz, Frank
Author_Institution
Inst. fur Mikround Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
Volume
101
Issue
7
fYear
2013
fDate
7/1/2013 12:00:00 AM
Firstpage
1567
Lastpage
1584
Abstract
Graphene is a relatively new material with unique properties that holds promise for electronic applications. Since 2004, when the first graphene samples were intentionally fabricated, the worldwide research activities on graphene have literally exploded. Apart from physicists, also device engineers became interested in the new material and soon the prospects of graphene in electronics have been considered. For the most part, the early discussions on the potential of graphene had a prevailing positive mood, mainly based on the high carrier mobilities observed in this material. This has repeatedly led to very optimistic assessments of the potential of graphene transistors and to an underestimation of their problems. In this paper, we discuss the properties of graphene relevant for electronic applications, examine its advantages and problems, and summarize the state of the art of graphene transistors.
Keywords
MOSFET; carrier mobility; graphene; C; electronic applications; graphene properties; graphene transistors; high carrier mobilities; Field effect transistors; Graphene; Logic gates; MOSFET; Nanomaterials; Radio frequency; Silicon; Bilayer graphene; Field-effect transistor (FET); graphene; graphene nanoribbon; logic circuit; radio frequency (RF);
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2013.2257633
Filename
6518205
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