• DocumentCode
    742684
  • Title

    Graphene Transistors: Status, Prospects, and Problems

  • Author

    Schwierz, Frank

  • Author_Institution
    Inst. fur Mikround Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
  • Volume
    101
  • Issue
    7
  • fYear
    2013
  • fDate
    7/1/2013 12:00:00 AM
  • Firstpage
    1567
  • Lastpage
    1584
  • Abstract
    Graphene is a relatively new material with unique properties that holds promise for electronic applications. Since 2004, when the first graphene samples were intentionally fabricated, the worldwide research activities on graphene have literally exploded. Apart from physicists, also device engineers became interested in the new material and soon the prospects of graphene in electronics have been considered. For the most part, the early discussions on the potential of graphene had a prevailing positive mood, mainly based on the high carrier mobilities observed in this material. This has repeatedly led to very optimistic assessments of the potential of graphene transistors and to an underestimation of their problems. In this paper, we discuss the properties of graphene relevant for electronic applications, examine its advantages and problems, and summarize the state of the art of graphene transistors.
  • Keywords
    MOSFET; carrier mobility; graphene; C; electronic applications; graphene properties; graphene transistors; high carrier mobilities; Field effect transistors; Graphene; Logic gates; MOSFET; Nanomaterials; Radio frequency; Silicon; Bilayer graphene; Field-effect transistor (FET); graphene; graphene nanoribbon; logic circuit; radio frequency (RF);
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2013.2257633
  • Filename
    6518205