Title :
Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm
Author :
Pham, T.N. ; Du, W. ; Conley, B.R. ; Margetis, J. ; Sun, G. ; Soref, R.A. ; Tolle, J. ; Li, B. ; Yu, S.-Q.
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
High performance Si-based Ge0.9Sn0.1 photoconductive infrared detectors have been demonstrated. The device fabrication is fully compatible with the complementary metal-oxide-semiconductor (CMOS) process. The room temperature responsivity at 1.55 μm is 0.26 A/W and comparable with that of commercially available InGaAs and Ge photovoltaic detectors. Temperature-dependent study shows an increased peak responsivity of 2.85 A/W at 77 K. The spectral response has a longwave cutoff of 2.4 and 2.2 μm at 300 and 77 K, respectively. Specific detectivity (D*) was calculated and compared side by side with D* of market dominating infrared detectors.
Keywords :
CMOS integrated circuits; germanium compounds; infrared detectors; photodetectors; silicon; Si-Ge0.9Sn0.1; complementary metal oxide semiconductor CMOS process; photoconductive infrared detectors; photodetector; temperature 293 K to 298 K; temperature 300 K; temperature 77 K; temperature dependent study; wavelength 2.2 mum; wavelength 2.4 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.0331
