• DocumentCode
    742779
  • Title

    Graphene Electronics: Materials, Devices, and Circuits

  • Author

    Yanqing Wu ; Farmer, Damon B. ; Fengnian Xia ; Avouris, Phaedon

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    101
  • Issue
    7
  • fYear
    2013
  • fDate
    7/1/2013 12:00:00 AM
  • Firstpage
    1620
  • Lastpage
    1637
  • Abstract
    Graphene is a 2-D atomic layer of carbon atoms with unique electronic transport properties such as a high Fermi velocity, an outstanding carrier mobility, and a high carrier saturation velocity, which make graphene an excellent candidate for advanced applications in future electronics. In particular, the potential of graphene in high-speed analog electronics is currently being extensively explored. In this paper, we discuss briefly the basic electronic structure and transport properties of graphene, its large scale synthesis, the role of metal-graphene contact, field-effect transistor (FET) device fabrication (including the issues of gate insulators), and then focus on the electrical characteristics and promise of high-frequency graphene transistors with record-high cutoff frequencies, maximum oscillation frequencies, and voltage gain. Finally, we briefly discuss the first graphene integrated circuits (ICs) in the form of mixers and voltage amplifiers.
  • Keywords
    Fermi level; carrier mobility; electronic structure; field effect transistors; graphene; mixers (circuits); power amplifiers; semiconductor device manufacture; 2D atomic layer; FET device fabrication; Fermi velocity; carbon atoms; carrier mobility; carrier saturation velocity; electrical characteristics; electronic structure; electronic transport property; field-effect transistor device fabrication; future electronics; gate insulators; graphene electronics; graphene integrated circuits; high-frequency graphene transistors; high-speed analog electronics; large scale synthesis; metal-graphene contact; mixers; oscillation frequency; record-high cutoff frequency; voltage amplifiers; voltage gain; Electrodes; Field effect transistors; Gain measurement; Graphene; Integrated circuits; Materials; Nanoelectronics; Scattering; Transistors; Voltage control; Current gain; field-effect transistor (FET); graphene analog integrated circuits (ICs); graphene nanoelectronics; power gain; voltage gain;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2013.2260311
  • Filename
    6519298