DocumentCode :
742844
Title :
Graphene Growth and Device Integration
Author :
Colombo, Luigi ; Wallace, Robert M. ; Ruoff, Rodney S.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
101
Issue :
7
fYear :
2013
fDate :
7/1/2013 12:00:00 AM
Firstpage :
1536
Lastpage :
1556
Abstract :
Graphene has been introduced to the electronics community as a potentially useful material for scaling electronic devices to meet low-power and high-performance targets set by the semiconductor industry international roadmap, radio-frequency (RF) devices, and many more applications. Growth and integration of graphene for any device is challenging and will require significant effort and innovation to address the many issues associated with integrating the monolayer, chemically inert surface with metals and dielectrics. In this paper, we review the growth and integration of graphene for simple field-effect transistors and present physical and electrical data on the integrated graphene with metals and dielectrics.
Keywords :
field effect transistors; graphene; semiconductor industry; C; device integration; electronics community; field effect transistors; graphene growth; monolayer; radiofrequency devices; semiconductor industry; Chemical vapor deposition; Electrochemical processes; Graphene; Photoelectron microscopy; Raman scattering; Spectroscopy; Substrates; Surface treatment; X-ray scattering; Chemical vapor deposition (CVD); Raman spectroscopy; X-ray photoelectron spectroscopy; electrochemical transfer; graphene; mobility;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2013.2260114
Filename :
6519931
Link To Document :
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