• DocumentCode
    743144
  • Title

    From Holonyak to Today

  • Author

    Craford, M. George

  • Author_Institution
    Solid State Lighting Fellow, Philips Lumileds Lighting Co., San Jose, CA, USA
  • Volume
    101
  • Issue
    10
  • fYear
    2013
  • Firstpage
    2170
  • Lastpage
    2175
  • Abstract
    The demonstration of direct bandgap alloy semiconductor (GaAsP) visible (red) emitters by Nick Holonyak at General Electric in 1962 began the evolution of high-brightness LED technology. Today, high-brightness LEDs are a growing $12 billion business with applications which include traffic signals, automobiles, camera flash, display backlighting, and general illumination. This paper will discuss the key developments which enabled the evolution from the early red device with performance of less than 0.1 lumen/watt (lm/W) to today´s devices with performance in excess of 100 lm/W. LEDs are now replacing conventional light sources for general lighting applications. By 2020, LEDs are expected to be the dominant technology for general illumination; the energy savings will be around 10% of the total electricity utilized, which is the equivalent of 50 large nuclear power plants for the United States alone.
  • Keywords
    III-V semiconductors; brightness; gallium arsenide; light emitting diodes; lighting; GaAsP; direct bandgap alloy semiconductor visible emitters; energy savings; general illumination; general lighting applications; high-brightness LED technology; light sources; red device; red emitters; Light emitting diodes; Lighting; MOCVD; Performance evaluation; Photonic band gap; Substrates; AlInGaP light-emitting diodes (LEDs); GaAsP LEDs; Holonyak; LED; LED evolution; nitride LEDs;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2013.2274911
  • Filename
    6581862