DocumentCode
743144
Title
From Holonyak to Today
Author
Craford, M. George
Author_Institution
Solid State Lighting Fellow, Philips Lumileds Lighting Co., San Jose, CA, USA
Volume
101
Issue
10
fYear
2013
Firstpage
2170
Lastpage
2175
Abstract
The demonstration of direct bandgap alloy semiconductor (GaAsP) visible (red) emitters by Nick Holonyak at General Electric in 1962 began the evolution of high-brightness LED technology. Today, high-brightness LEDs are a growing $12 billion business with applications which include traffic signals, automobiles, camera flash, display backlighting, and general illumination. This paper will discuss the key developments which enabled the evolution from the early red device with performance of less than 0.1 lumen/watt (lm/W) to today´s devices with performance in excess of 100 lm/W. LEDs are now replacing conventional light sources for general lighting applications. By 2020, LEDs are expected to be the dominant technology for general illumination; the energy savings will be around 10% of the total electricity utilized, which is the equivalent of 50 large nuclear power plants for the United States alone.
Keywords
III-V semiconductors; brightness; gallium arsenide; light emitting diodes; lighting; GaAsP; direct bandgap alloy semiconductor visible emitters; energy savings; general illumination; general lighting applications; high-brightness LED technology; light sources; red device; red emitters; Light emitting diodes; Lighting; MOCVD; Performance evaluation; Photonic band gap; Substrates; AlInGaP light-emitting diodes (LEDs); GaAsP LEDs; Holonyak; LED; LED evolution; nitride LEDs;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2013.2274911
Filename
6581862
Link To Document