• DocumentCode
    743149
  • Title

    Solution-Processed Dual-Gate Polymer Field-Effect Transistors for Display Applications

  • Author

    Tae-Jun Ha ; Sonar, Prashant ; Dodabalapur, Ananth

  • Author_Institution
    Univ. of Texas, Austin, TX, USA
  • Volume
    9
  • Issue
    9
  • fYear
    2013
  • Firstpage
    710
  • Lastpage
    714
  • Abstract
    We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations.
  • Keywords
    charge measurement; display instrumentation; polymer blends; thin film transistors; TFT; active semiconductor layer; bottom-gate configuration; charge carrier fraction transport; charge transport measurement; diketopyrrolopyrrole-naphthalene copolymer; display application; single-gate device; solution-processed dual-gate polymer field-effect transistor; subthreshold swing; top-gate configuration; Capacitance; Charge carriers; Logic gates; Polymers; Semiconductor device measurement; Thin film transistors; Charge carrier transport; display applications; dual-gate configuration; non-quasi-static measurements; polymer field-effect transistors (FETs); velocity distributions;
  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2012.2224636
  • Filename
    6374702