Silicon-Validated Power Delivery Modeling and Analysis on a 32-nm DDR I/O Interface

Power integrity has become increasingly important for the designs in 32 nm or below. This paper discusses a silicon-validated methodology for power delivery (PD) modeling and simulation. Many prior works have focused on PD analysis and optimization. However, none of them provided a comprehensive modeling methodology with postsilicon data to validate the use of the models. In this paper, we present PD system models that are able to achieve less than 10% deviation from the supply noise measurements on a 32-nm industrial double date-rate I/O design. Our models are able to capture the unique impacts of on-die inductance, state-dependent coupling capacitance, and die-package interaction. Those impacts are prominent for the designs in 32 nm or below but were considered negligible or even not noted in earlier technology nodes. Comparisons were made to quantify the impacts of different modeling strategies on supply noise prediction accuracy. This specifically provides designers insights in selecting appropriate models for PD analysis.