Title :
Ultrashort SiGe Heterojunction Bipolar Transistor-Based High-Speed Optical Modulator
Author :
Pengfei Wu ; Clarke, Ryan ; Novak, Jiri ; Shengling Deng ; McDonald, John ; Huang, Zhaoran Rena
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A graded base SiGe HBT optical modulator has high-speed, high optical modulation efficiency, small footprint. In this paper, we present our work in the design and modeling of an HBT optical modulator, its driver circuit and fabrication and integration. A high-efficient HBT electro-optical (EO) modulator with π phase-shift length of 22.6 μm is investigated. The speed of this modulator is calculated to be 30 Gb/s. To verify the functionality of HBT structure as an EO modulator, an 80 Gb/s serializer and driver with an HBT modulator is fabricated by the IBM 8HP BiCMOS process, which has much higher speed but lower modulation efficiency.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; driver circuits; heterojunction bipolar transistors; integrated optoelectronics; optical fabrication; optical modulation; semiconductor device models; HBT; IBM 8HP BiCMOS; SiGe; bit rate 30 Gbit/s; bit rate 80 Gbit/s; driver circuit; electro-optical modulator; heterojunction bipolar transistor; high-speed optical modulator; wavelength 22.6 mum; Electrooptic modulators; Electrooptical waveguides; Heterojunction bipolar transistors; Optical refraction; Electro-optic (EO) modulators; heterojunction bipolar transistors (HBTs); intensity modulation; optical interconnections;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2012.2234443
