DocumentCode :
743729
Title :
Adaptive Proactive Reconfiguration: A Technique for Process-Variability- and Aging-Aware SRAM Cache Design
Author :
Pouyan, Peyman ; Amat, Esteve ; Rubio, Antonio
Author_Institution :
Dept. of Electron., Polytech. Univ. of Catalonia, Barcelona, Spain
Volume :
23
Issue :
9
fYear :
2015
Firstpage :
1951
Lastpage :
1955
Abstract :
Nanoscale circuits are subject to a wide range of new limiting phenomena making essential to investigate new design strategies at the circuit and architecture level to improve its performance and reliability. Proactive reconfiguration is an emerging technique oriented to extend the system lifetime of memories affected by aging. In this brief, we present a new approach for static random access memory (SRAM) design that extends the cache lifetime when considering process variation and aging in the memory cells using an adaptive strategy. To track the aging in the SRAM cells we propose an on-chip monitoring technique. Our results show the technique as a feasible way to extend the cache lifetime up to 5X.
Keywords :
SRAM chips; ageing; integrated circuit design; integrated circuit reliability; integrated circuit testing; logic design; nanoelectronics; SRAM cells; adaptive proactive reconfiguration; aging-aware SRAM cache design; cache lifetime; memory cells; nanoscale circuits; on-chip monitoring technique; process variation; process-variability-SRAM cache design; static random access memory; system lifetime; Aging; Monitoring; SRAM cells; Temperature measurement; Transistors; Very large scale integration; Adaptive proactive reconfiguration; aging sensor; process variation; reliability; static random access memory (SRAM);
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2014.2355873
Filename :
6915734
Link To Document :
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