• DocumentCode
    743902
  • Title

    Extended-Gate ISFETs Based on Sputtered Amorphous Oxides

  • Author

    Pinto, J.V. ; Branquinho, Rita ; Barquinha, Pedro ; Alves, E. ; Martins, Rui P. ; Fortunato, Elvira

  • Author_Institution
    Dept. de Cienc. dos Mater., Univ. Nova de Lisboa (UNL), Caparica, Portugal
  • Volume
    9
  • Issue
    9
  • fYear
    2013
  • Firstpage
    729
  • Lastpage
    734
  • Abstract
    We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, Ta2O5:SiO2 as the dielectric and Ta2O5 as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.
  • Keywords
    biosensors; ion sensitive field effect transistors; Ta2O5:SiO2; constant ionic strength pH buffer solutions; device characterization; extended-gate ISFET; low-cost biosensors; room-temperature disposable biosensors; sensitive layer; sputtered amorphous oxides; Dielectrics; Logic gates; Sensitivity; Sensors; Silicon; Temperature measurement; Transistors; Amorphous oxides; ISFET; Ta $_{2}$O $_{5}$ sensing layer; pH sensors; sputtering;
  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2012.2227298
  • Filename
    6387628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=743902