Title :
Extended-Gate ISFETs Based on Sputtered Amorphous Oxides
Author :
Pinto, J.V. ; Branquinho, Rita ; Barquinha, Pedro ; Alves, E. ; Martins, Rui P. ; Fortunato, Elvira
Author_Institution :
Dept. de Cienc. dos Mater., Univ. Nova de Lisboa (UNL), Caparica, Portugal
Abstract :
We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, Ta2O5:SiO2 as the dielectric and Ta2O5 as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.
Keywords :
biosensors; ion sensitive field effect transistors; Ta2O5:SiO2; constant ionic strength pH buffer solutions; device characterization; extended-gate ISFET; low-cost biosensors; room-temperature disposable biosensors; sensitive layer; sputtered amorphous oxides; Dielectrics; Logic gates; Sensitivity; Sensors; Silicon; Temperature measurement; Transistors; Amorphous oxides; ISFET; Ta $_{2}$O $_{5}$ sensing layer; pH sensors; sputtering;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2012.2227298
