Fabrication of SnS Using PECVD Method With Combined Solid Sources

Author

Junfeng Chen ; Pei Liu ; Ming Chen ; Shengming Wang ; Guodong Wang ; Minghai Liu

Author_Institution

State Key Lab. of Adv. Electromagn. Eng. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China

Volume

42

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

2792

Lastpage

2793

Abstract

A flat capacitively coupled plasma enhanced chemical vapor deposition reactor is used to prepare tin sulfide thin films. In this equipment, the plasma is generated by a radio-frequency power supply with the frequency of 13.56 MHz, and there are three quartz crucibles fixed on the side of the chamber between the two electrodes, which is a novel design from general plasma enhanced chemical vapor deposition facility. The images of the plasma discharge are presented, and a fiber optic spectrometer (AvaSpec-2048) is used to monitor the different plasma discharged states. The SnS films are obtained with power ranges from 80 to 120 W and vapor of the solid sources at 50-Pa pressure. The prepared films possess the excellent photo-electricity property.

Keywords

discharges (electric); photoelectricity; photoluminescence; plasma CVD; plasma production; thin films; tin compounds; PECVD; SnS; capacitively coupled plasma enhanced chemical vapor deposition reactor; chamber side; electrodes; fiber optic spectrometer; frequency 13.56 MHz; photoelectricity property; plasma discharge; plasma generation; power 80 W to 120 W; pressure 50 Pa; quartz crucibles; radiofrequency power supply; solid sources; tin sulfide thin films; Argon; Chemical vapor deposition; Discharges (electric); Optical device fabrication; Plasmas; Solids; Plasma enhanced chemical vapor deposition (PECVD); SnS films; spectroscopic diagnosis; spectroscopic diagnosis.;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2014.2321224

Filename

6815983