Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance

Author

Panpan Li ; Hongjian Li ; Yongbing Zhao ; Junjie Kang ; Zhicong Li ; Zhiqiang Liu ; Xiaoyan Yi ; Jinmin Li ; Guohong Wang

Author_Institution

Semicond. Lighting R&D Center, Inst. of Semicond., Beijing, China

Volume

27

Issue

19

fYear

2015

Firstpage

2004

Lastpage

2006

Abstract

The excellent electrostatic discharge (ESD) resistance of InGaN-light-emitting diodes is achieved by enhancing the internal capacitance. By inserting three pairs of 140-/40-nm u/n-GaN (5 × 10¹⁸ cm^-3) layers on the low doped n-spacer layer before the active region, the internal capacitance was raised from 50 to 103 pF, while the human body model ESD pass yield at -8000 V was increased from 40% to 98%. A lower energy dispassion on the devices due to the enhanced internal capacitance leads to the excellent ESD resistance.

Keywords

III-V semiconductors; capacitance; electrostatic discharge; indium compounds; light emitting diodes; light sources; optical multilayers; ESD resistance property; InGaN; InGaN LED; InGaN-light-emitting diodes; active region; capacitance 50 pF to 103 pF; electrostatic discharge resistance; energy dispassion; enhanced internal capacitance; human body model; low doped n-spacer layer; u/n-GaN layers; voltage -8000 V; Capacitance; Capacitance-voltage characteristics; Electrostatic discharges; Gallium nitride; Immune system; Light emitting diodes; Periodic structures; Light-emitting diodes (LEDs); electrostatic discharge (ESD); semiconductor devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2448418

Filename

7134714