DocumentCode
744629
Title
High Sensitivity 
Pixel Pitch 
Uncooled Infrared Focal Plane Arrays Based on
Author
Wang, P. ; Chen, S. ; Gan, X. ; Sun, R. ; Chen, W. ; Yang, S. ; Wang, H.
Author_Institution
Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume
36
Issue
9
fYear
2015
Firstpage
923
Lastpage
925
Abstract
This letter presents a 17 μm pixel pitch 640 × 512 uncooled infrared focal plane arrays based on the double sacrificial layer microbolometer technology incorporating amorphous vanadium oxide thin film and frequency selective structure. The amorphous vanadium oxide thin-film features low-noise and high-thermal coefficient of resistance characteristics, which help to improve the radiometric performance of the microbolometer. By incorporating a frequency selective second platform, the responsivity of the microbolometer was improved by nearly 30% over 8~14 μm spectra band. Noise equivalent temperature difference of less than 35 mK was obtained at 300 K ambient temperature with f/1.0 optics.
Keywords
bolometers; focal planes; frequency selective surfaces; infrared detectors; microsensors; radiometry; temperature measurement; temperature sensors; thin film sensors; VOx; amorphous vanadium oxide thin film structure; double sacrificial layer microbolometer technology; f-1.0 optics; frequency selective second platform; high-thermal coefficient; low-noise coefficient; noise equivalent temperature difference; radiometric performance; temperature 300 K; uncooled infrared focal plane array; wavelength 8 mum to 14 mum; Deformable models; Detectors; Integrated circuit modeling; Optical device fabrication; Optical sensors; Sensitivity; IRFPAs; Microbolometer; Microbolometer,; NETD; amorphous vanadium oxide thin film;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2451995
Filename
7145394
Link To Document