Ultra low phase noise sapphire-SiGe HBT oscillator

Author

Llopis, O. ; Cibiel, G. ; Kersale, Y. ; Regis, M. ; Chaubet, M. ; Giordano, V.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

Volume

12

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

157

Lastpage

159

Abstract

A state of the art C-band oscillator is presented. It is based on a high Q WGM sapphire resonator combined with a low residual phase noise SiGe HBT amplifier. A two oscillator experiment performed on this system has revealed a phase noise level of -133 dBc/Hz at 1 kHz offset from the 4.85 GHz carrier, which is the best published phase noise result for a single loop, free running microwave oscillator.

Keywords

Ge-Si alloys; Q-factor; circuit noise; dielectric resonator oscillators; feedback oscillators; heterojunction bipolar transistors; microwave oscillators; phase noise; sapphire; semiconductor materials; 4.85 GHz; Al/sub 2/O/sub 3/; C-band oscillator; DRO; SHF; SiGe; SiGe HBT amplifier; bipolar transistor microwave oscillator; feedback loop; high-Q WGM resonator; sapphire resonator; sapphire-SiGe HBT oscillator; ultra low phase noise oscillator; whispering gallery mode resonator; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave oscillators; Microwave transistors; Phase noise; Silicon germanium; Stability; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.1000188

Filename

1000188