• DocumentCode
    744849
  • Title

    Low threshold ion-implanted Nd:YAG channel waveguide laser

  • Author

    Field, S.J. ; Hanna, D.C. ; Large, A.C. ; Shepherd, D.P. ; Tropper, A.C. ; Chandler, P.J. ; Townsend, P.D. ; Zhang, L.

  • Author_Institution
    Dept. of Phys., Southampton Univ., UK
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2375
  • Lastpage
    2376
  • Abstract
    The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as approximately 500 mu W in good agreement with theoretical expectation. Output slope efficiencies of approximately 29% have also been demonstrated.
  • Keywords
    integrated optics; ion implantation; neodymium; optical waveguides; solid lasers; yttrium compounds; 29 percent; 500 muW; YAG:Nd; YAl5O12:Nd; absorbed power thresholds; channel waveguide laser; diode pumping; ion-implanted; low threshold type; output slope efficiencies; threshold reduction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911470
  • Filename
    121367
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=744849