Title :
Hydrogen catalytic oxidation reaction on Pd-doped porous silicon
Author :
Tsamis, Christos ; Tsoura, Loukia ; Nassiopoulou, Androula G. ; Travlos, Anastasios ; Salmas, Constantinos E. ; Hatzilyberis, Kostas S. ; Androutsopoulos, George P.
Author_Institution :
IMEL/NCSR, Athens, Greece
fDate :
4/1/2002 12:00:00 AM
Abstract :
The efficiency of Pd-doped porous silicon (PS) as a catalytic material for hydrogen sensing is studied. Pd is deposited by an electroless process on the internal surface of porous silicon. The catalytic behavior of Pd-doped PS samples is estimated and the parameters that influence the kinetics of the chemical reaction are evaluated. The catalytic activity is examined through the kinetics of the chemical reaction, which occurs in low hydrogen content mixtures with air (up to 1% v/v in air), far below the mixture flammability limit. It was found that the catalytic activity of Pd-doped porous silicon at 160°C is significantly higher than that of a planar surface covered with Pd. The dependence of the catalytic activity on processing conditions was also evaluated. These results open important new possibilities for applications in gas sensors
Keywords :
catalysis; doping profiles; electrodeposition; elemental semiconductors; gas sensors; hydrogen; oxidation; palladium; porous semiconductors; reaction kinetics; silicon; 160 C; H2; Pd electroless deposition; Pd-doped PS catalytic behavior; Pd-doped porous silicon; Si:Pd; calorimetric sensors; catalytic activity; catalytic material; chemical reaction kinetics; chemical sensors; gas mixture flammability limit; gas sensing; gas sensors; hydrogen catalytic oxidation reaction; hydrogen content; hydrogen oxidation reaction; hydrogen sensing; porous silicon; porous silicon internal surface; processing conditions; Associate members; Biological materials; Chemical sensors; Combustion; Flammability; Hydrogen; Kinetic theory; Oxidation; Silicon; Surface resistance;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2002.1000248