• DocumentCode
    744865
  • Title

    Hydrogen catalytic oxidation reaction on Pd-doped porous silicon

  • Author

    Tsamis, Christos ; Tsoura, Loukia ; Nassiopoulou, Androula G. ; Travlos, Anastasios ; Salmas, Constantinos E. ; Hatzilyberis, Kostas S. ; Androutsopoulos, George P.

  • Author_Institution
    IMEL/NCSR, Athens, Greece
  • Volume
    2
  • Issue
    2
  • fYear
    2002
  • fDate
    4/1/2002 12:00:00 AM
  • Firstpage
    89
  • Lastpage
    95
  • Abstract
    The efficiency of Pd-doped porous silicon (PS) as a catalytic material for hydrogen sensing is studied. Pd is deposited by an electroless process on the internal surface of porous silicon. The catalytic behavior of Pd-doped PS samples is estimated and the parameters that influence the kinetics of the chemical reaction are evaluated. The catalytic activity is examined through the kinetics of the chemical reaction, which occurs in low hydrogen content mixtures with air (up to 1% v/v in air), far below the mixture flammability limit. It was found that the catalytic activity of Pd-doped porous silicon at 160°C is significantly higher than that of a planar surface covered with Pd. The dependence of the catalytic activity on processing conditions was also evaluated. These results open important new possibilities for applications in gas sensors
  • Keywords
    catalysis; doping profiles; electrodeposition; elemental semiconductors; gas sensors; hydrogen; oxidation; palladium; porous semiconductors; reaction kinetics; silicon; 160 C; H2; Pd electroless deposition; Pd-doped PS catalytic behavior; Pd-doped porous silicon; Si:Pd; calorimetric sensors; catalytic activity; catalytic material; chemical reaction kinetics; chemical sensors; gas mixture flammability limit; gas sensing; gas sensors; hydrogen catalytic oxidation reaction; hydrogen content; hydrogen oxidation reaction; hydrogen sensing; porous silicon; porous silicon internal surface; processing conditions; Associate members; Biological materials; Chemical sensors; Combustion; Flammability; Hydrogen; Kinetic theory; Oxidation; Silicon; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2002.1000248
  • Filename
    1000248