• DocumentCode
    744897
  • Title

    20 Gbit/s AlGaAs/GaAs HBT decision circuit IC

  • Author

    Runge, K. ; Gimlett, J.L. ; Nubling, R.B. ; Wang, K.C. ; Chang, M.F. ; Pierson, R.L. ; Asbeck, P.M.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2376
  • Lastpage
    2378
  • Abstract
    An experimental 20 Gbit/s decision circuit IC based on AlGaAs/GaAs HBTs, has been implemented, which features a differential input sensitivity of 80 mV peak to peak and a phase margin of 292 degrees at the SONET STS-192 rate of 9.95 Gbit/s. The IC nominally dissipates 870 mW of power, but may be operated up to 10 Gbit/s with a power dissipation of 450 mW. The circuit was fabricated in a high current gain baseline HBT technology, and occupies an area of 1.15*1 mm2.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 20 Gbit/s; 450 to 870 mW; 9.905 Gbit/s; AlGaAs-GaAs; HBT decision circuit IC; SONET STS-192 rate; baseline HBT technology; high current gain; optical fibre transmission; optical ring networks;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911471
  • Filename
    121368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=744897