Title :
Alignment tolerance enlargement of a high-speed photodiode by a self-positioned microball lens
Author :
Yun-Hsun Huang ; Chih-Chao Yang ; Te-Chin Peng ; Meng-Chyi Wu ; Ho, C.-L. ; Wen-Jeng Ho
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
By integrating a commercially available microball lens on the InGaAs p-i-n photodiode chip, we have achieved at least 5- and 16-fold improvements of the optical alignment tolerance in the transverse and longitudinal axes, respectively, without sacrificing the diode efficiency. The optical alignment during lens/chip integration is achieved by a self-positioning process, which provides an on-chip ball-lens socket in concentric circles to the photodiode aperture to sustain the drop-in microball lens. The photodiode after lens integration exhibits a 3-dB bandwidth larger than 9 GHz and a responsivity larger than 0.9 A/W, both at 1310-nm wavelength. In addition, the InGaAs photodiode exhibits a dark current density of less than 3 μA/cm2, both before and after lens positioning, indicating a proper integration.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; microlenses; p-i-n photodiodes; 1310 nm; InGaAs; InGaAs p-i-n photodiode chip; alignment tolerance enlargement; dark current density; drop-in microball lens; high-speed photodiode; lens integration; lens positioning; lens-chip integration; microball lens; on-chip ball-lens socket; optical alignment; photodiode aperture; responsivity; self-positioned lens; Apertures; Bandwidth; Dark current; High speed optical techniques; Indium gallium arsenide; Integrated optics; Lenses; P-i-n diodes; PIN photodiodes; Sockets; 10 Gb/s; InGaAs; microball lens; p-i-n photodiode; socket;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.860020