DocumentCode
744995
Title
Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE
Author
Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Fullowan, T.R. ; Lothian, J.R. ; Wisk, P.W. ; Chen, Y.K. ; Hobson, W.S. ; Smith, P.R.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
27
Issue
25
fYear
1991
Firstpage
2391
Lastpage
2393
Abstract
High performance, selfaligned processed npn and pnp AlGaAs/GaAs HBTs grown by MOMBE are reported. Tin and carbon were used as n- and p-type dopants, respectively. Cutoff frequency and maximum frequency of oscillation of 53 and 128 GHz, respectively, were obtained for npn transistors (2*5 mu m2 emitter) and values of 30 and 12 GHz, respectively, were measured for pnp transistors (2*4 mu m2 emitter).
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; solid-state microwave devices; 12 to 128 GHz; AlGaAs-GaAs; C dopant; HBTs; MOMBE; Sn dopant; n-p-n devices; n-type dopant; p-n-p devices; p-type dopants; selfaligned processed;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911479
Filename
121376
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