MOSFET degradation kinetics and its simulation

Author

Penzin, Oleg ; Haggag, A. ; McMahon, W. ; Lyumkis, Eugeny ; Hess, K.

Author_Institution

Integrated Syst. Eng., San Jose, CA, USA

Volume

50

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

1445

Lastpage

1450

Abstract

In this work, the time-dependence of Si/SiO₂ interface trap formation is considered by solving an improved set of Si-H defect kinetics equations that take into account interface disorder and the Si-H bond activation energy evolution as the bonds are broken. This model is applied to the simulation of metal oxide semiconductor field effect transistor (MOSFET) high field and hot carrier degradation, and then verified with various experimental data. An estimation of the potential barrier of the Si/SiO₂ interface is given.

Keywords

MOSFET; dangling bonds; high field effects; hot carriers; interface states; semiconductor device models; semiconductor device reliability; semiconductor-insulator boundaries; silicon; silicon compounds; MOSFET degradation kinetics; MOSFET degradation simulation; Si-H bond activation energy evolution; Si-H defect kinetics equations; Si-SiO₂; Si/SiO₂ interface trap formation; high field degradation; hot carrier degradation; interface disorder; potential barrier; time-dependence; Bonding; Degradation; Equations; FETs; Hot carriers; Hydrogen; Kinetic theory; MOSFET circuits; Modeling; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.813333

Filename

1213815