DocumentCode
745070
Title
A unified RLC model for high-speed on-chip interconnects
Author
Sim, Sang-Pil ; Krishnan, Shoba ; Petranovic, Dusan M. ; Arora, Narain D. ; Lee, Kwyro ; Yang, Cary Y.
Author_Institution
Santa Clara Univ., CA, USA
Volume
50
Issue
6
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
1501
Lastpage
1510
Abstract
In this paper, we propose a compact on-chip interconnect model for full-chip simulation. The model consists of two components, a quasi-three-dimensional (3-D) capacitance model and an effective loop inductance model. In the capacitance model, we propose a novel concept of effective width (Weff) for a 3-D wire, which is derived from an analytical two-dimensional (2-D) model combined with a new analytical "wall-to-wall" model. The effective width provides a physics-based approach to decompose any 3-D structure into a series of 2-D segments, resulting in an efficient and accurate capacitance extraction. In the inductance model, we use an effective loop inductance approach for an analytic and hierarchical model construction. In particular, we show empirically that high-frequency signals (above multi-GHz) propagating through random signal lines can be approximated by a quasi-TEM mode relationship, leading to a simple way to extract the high-frequency inductance from the capacitance of the wire. Finally, the capacitance and inductance models are combined into a unified frequency-dependent RLC model, describing successfully the wide-band characteristics of on-chip interconnects up to 100 GHz. Non-orthogonal wire architecture is also investigated and included in the proposed model.
Keywords
VLSI; capacitance; high-speed integrated circuits; inductance; integrated circuit interconnections; integrated circuit modelling; 100 GHz; 3D capacitance model; HF signals; compact on-chip interconnect model; effective loop inductance model; frequency-dependent RLC model; full-chip simulation; hierarchical model construction; high-frequency signals; high-speed on-chip interconnects; nonorthogonal wire architecture; quasi-TEM mode relationship; unified RLC model; wideband characteristics; Analytical models; Capacitance; Frequency; Inductance; Integrated circuit interconnections; Nearest neighbor searches; Two dimensional displays; Ultra large scale integration; Wideband; Wire;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.813345
Filename
1213823
Link To Document