DocumentCode :
745116
Title :
Channel width dependence of NMOSFET hot carrier degradation
Author :
Li, Erhong ; Prasad, Sharad
Author_Institution :
Res. & Dev. Center, LSI Logic, Milpitas, CA, USA
Volume :
50
Issue :
6
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
1545
Lastpage :
1548
Abstract :
The channel width dependence of hot carrier reliability on NMOSFETs from 0.4-μm to 0.13-μm technology has been studied at both Ib,peak and Vg = Vd conditions. Enhanced degradation on narrow width devices happens on most technologies. The Ib/Id value and vertical electric field are proposed to be the reasons for enhanced degradation on narrow width NMOSFETs.
Keywords :
MOSFET; hot carriers; semiconductor device reliability; 0.4 to 0.13 micron; NMOSFET; channel width dependence; device degradation; hot carrier reliability; vertical electric field; Degradation; Electron traps; Hot carriers; Impact ionization; Isolation technology; MOSFET circuits; Stress; Testing; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.813342
Filename :
1213830
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=745116
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