Title :
Large-signal linearity in III-N MOSDHFETs
Author :
Tarakji, A. ; Fatima, H. ; Hu, X. ; Zhang, J.-P. ; Simin, G. ; Khan, M. Asif ; Shur, M.S. ; Gaska, R.
Author_Institution :
Sensor Electron. Technol. (SET) Inc., Columbia, SC, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
The authors report the output RF signal distortions in the novel SiO/sub 2/-AlGaN-InGaN-GaN metal-oxide-semiconductor double heterostructure FET (MOSDHFET) device structure. Their comparative studies of MOSDHFETs and Schottky gate type DHFETs fabricated on the same wafer show significantly improved RF output signal linearity in MOSDHFETs at high-input signals. At the RF output powers close to saturation, the relative level of the second and third harmonic powers in MOSDHFETs was found to be less than -30 dB, which is about 15-20 dB lower as compared to identical geometry DHFET. This improvement is attributed to a better linearity of the MOSDHFET current-gate voltage characteristics.
Keywords :
III-V semiconductors; aluminium compounds; distortion; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; silicon compounds; wide band gap semiconductors; III-N MOSDHFETs; MOS double heterostructure FET; MOS-HFET device; RF output signal linearity; SiO/sub 2/-AlGaN-InGaN-GaN; current-gate voltage characteristics; high-input signals; high-power microwave FET; large-signal linearity; output RF signal distortions; Capacitance; HEMTs; Linearity; MODFETs; MOSHFETs; Microwave FETs; Monitoring; RF signals; Radio frequency; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.813355
