A study on the transient effect due to hydrogen passivation in InGaP HBTs

Author

Deng, Shao-You ; Wu, Chang-Han ; Lee, Joseph Ya-Min

Author_Institution

Dept. of Electr. Eng., Tsing-Hua Univ., Hsinchu, Taiwan

Volume

24

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

372

Lastpage

374

Abstract

The transient effect of InGaP heterojunction bipolar transistors is studied. The current gain increases with V/sub BE/ bias and becomes stable after several sweeps. The time to reach steady state depends on the collector current I/sub C/ and the ambient temperature. A new electrical method was introduced to calculate the passivation ratio, which is defined as the number of donor hydrogen (H/sup +/) atoms divided by the number of negatively charged carbon atoms (C/sup -/) in the heavily doped base layer. A passivation ratio of 69.98% obtained by this method agrees very well with that measured by secondary ion mass spectrometry of 69%.

Keywords

III-V semiconductors; carbon; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; hydrogen; indium compounds; passivation; transient analysis; C; H; H passivation; InGaP; InGaP HBTs; collector current; current gain; electrical method; heavily doped base layer; heterojunction bipolar transistors; passivation ratio determination; transient analysis; transient effect; Atomic layer deposition; Atomic measurements; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Mass spectroscopy; Passivation; Temperature dependence; Thermal degradation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.813360

Filename

1213860