Title :
Ultra high-speed InP-InGaAs SHBTs with fmax of 478 GHz
Author :
Daekyu Yu ; Kyungho Lee ; Bumman Kim ; Ontiveros, D. ; Vargason, K. ; Kuo, J.M. ; Kao, Y.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
fDate :
6/1/2003 12:00:00 AM
Abstract :
InP-based single heterojunction bipolar transistors (SHBTs) for high-speed circuit applications were developed. Typical common emitter DC current gain (/spl beta/) and BV/sub CEO/ were about 17 and 10 V, respectively. Maximum extrapolated fmax of 478 GHz with fT of 154 GHz was achieved for 0.5 × 10 μm2 emitter size devices at 300 kA/cm2 collector current density and 1.5 V collector bias. This is the highest fmax ever reported for any nontransferred substrate HBTs, as far as the authors know. This paper highlights the optimized conventional process, and the authors have great hopes for the process that offers inherent advantages for the direct implementation to high-speed electronic circuit fabrication.
Keywords :
III-V semiconductors; capacitance; current density; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device models; 1.5 V; 10 V; 154 GHz; 17 V; 478 GHz; InP-InGaAs; base resistance; base-collector capacitance; high-speed circuit applications; nontransferred substrate HBTs; optimized conventional process; single heterojunction bipolar transistors; small-signal equivalent circuit model; ultra high-speed SHBTs; Bipolar transistors; Capacitance; Circuits; Current density; Heterojunction bipolar transistors; High-speed electronics; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.813367
