Title :
High current gain 4H-SiC npn bipolar junction transistors
Author :
Huang, Chih-Fang ; Cooper, James A., Jr.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. V/sub CEO/ of these devices is 500 V, and V/sub CBO/ is 700 V.
Keywords :
power bipolar transistors; silicon compounds; wide band gap semiconductors; 4H-SiC transistors; 500 V; 700 V; SiC; bipolar junction transistors; common emitter current gain; epitaxial-emitter transistors; high current gain BJT; n-p-n BJTs; p+ base contact implant; spacing; Aluminum; Annealing; Argon; Conductivity; Fingers; Gold; Implants; MOSFETs; Nitrogen; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.813520
