• DocumentCode
    745379
  • Title

    High current gain 4H-SiC npn bipolar junction transistors

  • Author

    Huang, Chih-Fang ; Cooper, James A., Jr.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    24
  • Issue
    6
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    396
  • Lastpage
    398
  • Abstract
    The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. V/sub CEO/ of these devices is 500 V, and V/sub CBO/ is 700 V.
  • Keywords
    power bipolar transistors; silicon compounds; wide band gap semiconductors; 4H-SiC transistors; 500 V; 700 V; SiC; bipolar junction transistors; common emitter current gain; epitaxial-emitter transistors; high current gain BJT; n-p-n BJTs; p+ base contact implant; spacing; Aluminum; Annealing; Argon; Conductivity; Fingers; Gold; Implants; MOSFETs; Nitrogen; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.813520
  • Filename
    1213868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=745379