DocumentCode
745410
Title
Source-gated thin-film transistors
Author
Shannon, J.M. ; Gerstner, E.G.
Author_Institution
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Volume
24
Issue
6
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
405
Lastpage
407
Abstract
The thin-film transistor is one of a family of field-effect transistors. They all operate in the same way: a gate modulates the conductance of a channel and the current saturates when the drain end is depleted of carriers. The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor. The gate controls the supply of carriers and the current saturates when the source is depleted of carriers. The result is a thin-film transistor that can operate at lower voltages with larger gains and lower power dissipation. It should also preserve its characteristics with smaller dimensions.
Keywords
MISFET; semiconductor device measurement; thin film transistors; Si:H-SiN; carrier supply control; conductance modulation; current saturation; field effect transistors; gains; lower voltage operation; power dissipation; source-gated thin-film transistors; source-gated transistor; transistor characteristics; undoped a-Si:H; Circuits; Electrodes; FETs; MIS devices; Power dissipation; Schottky barriers; Semiconductor devices; Substrates; Thin film transistors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.813379
Filename
1213871
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