• DocumentCode
    745410
  • Title

    Source-gated thin-film transistors

  • Author

    Shannon, J.M. ; Gerstner, E.G.

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • Volume
    24
  • Issue
    6
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    405
  • Lastpage
    407
  • Abstract
    The thin-film transistor is one of a family of field-effect transistors. They all operate in the same way: a gate modulates the conductance of a channel and the current saturates when the drain end is depleted of carriers. The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor. The gate controls the supply of carriers and the current saturates when the source is depleted of carriers. The result is a thin-film transistor that can operate at lower voltages with larger gains and lower power dissipation. It should also preserve its characteristics with smaller dimensions.
  • Keywords
    MISFET; semiconductor device measurement; thin film transistors; Si:H-SiN; carrier supply control; conductance modulation; current saturation; field effect transistors; gains; lower voltage operation; power dissipation; source-gated thin-film transistors; source-gated transistor; transistor characteristics; undoped a-Si:H; Circuits; Electrodes; FETs; MIS devices; Power dissipation; Schottky barriers; Semiconductor devices; Substrates; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.813379
  • Filename
    1213871