• DocumentCode
    745484
  • Title

    Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

  • Author

    Joo, Moon Sig ; Cho, Byung Jin ; Balasubramanian, B. ; Kwong, Dim-Lee

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
  • Volume
    26
  • Issue
    12
  • fYear
    2005
  • Firstpage
    882
  • Lastpage
    884
  • Abstract
    Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccrit) above which there is no Fermi-level pinning, and the C crit depends on the underlying gate dielectric material also.
  • Keywords
    Fermi level; dielectric materials; nickel compounds; stoichiometry; Fermi-level pinning; NiSi; critical ratio; fully silicided gate; gate dielectric material; high-k dielectrics; stoichiometry dependence; Chemical vapor deposition; Dielectric materials; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Moon; Rapid thermal annealing; Silicidation; Silicon; Effective work function; Fermi-level pinning; Ni-silicided gate; fully silicided (FUSI) gate; high-K;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.859631
  • Filename
    1546141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=745484