Title :
High-density MIM capacitors (∼85 nF/cm2) on organic substrates
Author :
Liao, E.B. ; Guo, L.H. ; Kumar, R. ; Lo, G.Q. ; Balasubramanian, N. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
For the first time, transferring the prefabricated capacitors on a silicon wafer onto FR-4 has been used to realize high-density metal-insulator-metal (MIM) capacitors on an organic substrate. A high capacitance density ∼85 nF/cm2 was achieved on FR-4 substrate with PECVD silicon nitride as the dielectric layer. Excellent voltage coefficient (∼2.2 ppm/V2) and temperature coefficient (∼38 ppm/°C) were obtained for capacitors on FR-4. Dielectric leakage and breakdown characteristics have been assessed, and the results demonstrated acceptable performance. Thus, this technology provides a new method to embed/integrate high-density capacitors on organic substrates for the system-in-package applications.
Keywords :
MIM devices; capacitors; electric breakdown; leakage currents; plasma CVD coatings; silicon compounds; FR-4 substrates; PECVD silicon nitride; SiNi; dielectric breakdown; dielectric leakage; high-density MIM capacitors; high-density metal-insulator-metal capacitors; organic substrates; silicon wafer; wafer transfer; Dielectric substrates; Fabrication; Lamination; MIM capacitors; Noise measurement; Parasitic capacitance; Silicon; Temperature; Voltage; Wafer bonding; Metal–insulator–metal (MIM) capacitor; organic substrate; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC); wafer transfer;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.859618
