Title :
Input voltage sensitivity of GaAs/GaAlAs HEMT latched comparator
Author :
Feng, Songhe ; Seitzer, D.
Author_Institution :
Fraunhofer Inst. for Integrated Circuits, Erlangen, Germany
Abstract :
The input voltage sensitivity represents a critical parameter for a latched comparator in high-speed and high-precision data conversion applications. An analytical prediction of this parameter is presented and has been verified to be in good agreement with the experimental results from a high performance latched comparator implemented in 0.5 mu m GaAs/GaAlAs E/D HEMT technology.
Keywords :
III-V semiconductors; aluminium compounds; comparators (circuits); data conversion; field effect integrated circuits; gallium arsenide; high electron mobility transistors; 0.5 micron; GaAs-GaAlAs; III-V semiconductors; data conversion applications; input voltage sensitivity; latched comparator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920144
