• DocumentCode
    745492
  • Title

    Input voltage sensitivity of GaAs/GaAlAs HEMT latched comparator

  • Author

    Feng, Songhe ; Seitzer, D.

  • Author_Institution
    Fraunhofer Inst. for Integrated Circuits, Erlangen, Germany
  • Volume
    28
  • Issue
    3
  • fYear
    1992
  • Firstpage
    233
  • Lastpage
    235
  • Abstract
    The input voltage sensitivity represents a critical parameter for a latched comparator in high-speed and high-precision data conversion applications. An analytical prediction of this parameter is presented and has been verified to be in good agreement with the experimental results from a high performance latched comparator implemented in 0.5 mu m GaAs/GaAlAs E/D HEMT technology.
  • Keywords
    III-V semiconductors; aluminium compounds; comparators (circuits); data conversion; field effect integrated circuits; gallium arsenide; high electron mobility transistors; 0.5 micron; GaAs-GaAlAs; III-V semiconductors; data conversion applications; input voltage sensitivity; latched comparator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920144
  • Filename
    121395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=745492