Title :
Nitride-based LEDs with n/sup -/-GaN current spreading layers
Author :
Su, Y.K. ; Chang, S.J. ; Wei, S.C. ; Chuang, R.W. ; Chen, S.M. ; Li, W.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Nitride-based light-emitting diodes (LEDs) with n/sup -/-GaN current spreading layers were proposed and fabricated. With a 0.1-μm-thick n/sup -/-GaN current spreading layer, it was found that the output power could be enhanced by 35% without increasing the operation voltage of the LEDs at 20 mA. In addition, implementing the n/sup -/-GaN current spreading layer also significantly improved the electrostatic discharge characteristics of nitride-based LEDs.
Keywords :
III-V semiconductors; electrostatic discharge; gallium compounds; light emitting diodes; wide band gap semiconductors; 0.1 micron; 20 mA; GaN; current spreading layers; electrostatic discharge characteristics; nitride-based LED; nitride-based light-emitting diodes; Doping; Electrostatic discharge; Gallium nitride; Gold; Light emitting diodes; Power generation; Proximity effect; Quantum well devices; Temperature; Voltage; Current spreading; GaN; electrostatic discharge (ESD); light-emitting diode (LED);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.859647
