Title :
Calculation of phase distortion due to tunnel injection in heterojunction IMPATTs
Author :
Dash, G.N. ; Pati, S.P.
Author_Institution :
Dept. of Phys., Sambalpur Univ., India
Abstract :
A computer simulation method is suggested which uses the microwave negative resistance distribution profile within the depletion layer of an ATT device to calculate the phase distortion due to tunnel injected current. The method has been applied to explain the deterioration of device performance in GaAs/GaInAs heterostructure IMPATTs for high frequency operation.
Keywords :
III-V semiconductors; IMPATT diodes; digital simulation; gallium arsenide; indium compounds; negative resistance; tunnel diodes; GaAs-GaInAs; computer simulation method; depletion layer; device performance; heterojunction IMPATTs; high frequency operation; microwave negative resistance distribution profile; phase distortion; tunnel injection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920149
