Title :
Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to SiN passivation
Author :
Edwards, Andrew P. ; Mittereder, Jeffrey A. ; Binari, Steven C. ; Katzer, D. Scott ; Storm, David F. ; Roussos, Jason A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
A passivation method has been developed which reduces the degradation of AlGaN-GaN high electron mobility transistor (HEMT) electrical properties caused by extended dc bias or microwave power operation. The key aspect of this passivation technique is exposure to a low-power NH3 plasma prior to SiN deposition. Devices fabricated with the NH3 treatment prior to SiN passivation show minimal gate lag and current collapse after extended dc bias operation. In addition, the rate of degradation of the microwave power output while under continuous microwave operation is improved by at least 100 times as compared to SiN passivated HEMTs that were not treated with the NH3 plasma.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; nitrogen compounds; passivation; plasma materials processing; power HEMT; semiconductor device reliability; silicon compounds; surface treatment; AlGaN-GaN; AlGaN-GaN HEMT; HEMT degradation; HEMT reliability; NH3; NH3 plasma treatment; SiN; SiN passivated HEMT; SiN passivation; continuous microwave operation; current collapse; extended dc bias operation; gallium nitride; high electron mobility transistor; low-power NH3 plasma; microwave power output; minimal gate lag; Aluminum gallium nitride; Degradation; HEMTs; MODFETs; Microwave devices; Microwave theory and techniques; Passivation; Plasma devices; Plasma properties; Silicon compounds; Gallium nitride; high electron mobility transistor (HEMT); passivation; reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.844694
