Title :
Elimination of poly-Si gate depletion for sub-65-nm CMOS technologies by excimer laser annealing
Author :
Wong, Hiu Yung ; Takeuchi, Hideki ; King, Tsu-Jae ; Ameen, Michael ; Agarwal, Aditya
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
Pulsed excimer laser annealing (ELA) is used to reduce the poly-Si gate depletion effect (to <0.1 nm). Low resistivity (0.58 mΩ·cm) and high active boron concentration (4×1020 cm-3) at the gate-oxide interface are achieved while preserving the gate oxide quality and avoiding boron penetration, to meet International Technology Roadmap for Semiconductors requirements for sub-65-nm CMOS technology nodes. ELA is compatible with high-κ dielectric (HfO2) and results in significantly lower gate leakage current density as compared with rapid thermal annealing (RTA).
Keywords :
CMOS integrated circuits; boron; excimer lasers; hafnium compounds; interface phenomena; laser beam annealing; leakage currents; nanotechnology; semiconductor device breakdown; silicon; B; HfO2; Si; active boron concentration; boron penetration; gate leakage current density; gate-oxide interface; hafnium dioxide; high-K dielectric; low resistivity; poly-Si gate depletion; pulsed excimer laser annealing; sub-65-nm CMOS technology; Boron; CMOS technology; Crystalline materials; Dielectric materials; Hafnium oxide; Optical materials; Phonons; Rapid thermal annealing; Rapid thermal processing; Temperature; Boron penetration; excimer laser annealing (ELA); gate depletion; hafnium dioxide; high-;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.845502
