Title :
Improved electrical and reliability Characteristics of HfN--HfO2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first Process
Author :
Kang, J.F. ; Yu, H.Y. ; Ren, C. ; Wang, X.P. ; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N. ; Yang, H. ; Liu, X.Y. ; Han, R.Q. ; Kwong, D.-L.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
4/1/2005 12:00:00 AM
Abstract :
By using a high-temperature gate-first process, HfN--HfO2-gated nMOSFET with 0.95-nm equivalent oxide thickness (EOT) was fabricated. The excellent device characteristics such as the sub-1-nm EOT, high electron effective mobility (peak value ∼232 cm2/V·s) and robust electrical stability under a positive constant voltage stress were achieved. These improved device performances achieved in the sub-1-nm HfN--HfO2-gated nMOSFETs could be attributed to the low interfacial and bulk traps charge density of HfO2 layer due to the 950°C high-temperature source/drain activation annealing process after deposition of the HfN--HfO2 gate stack.
Keywords :
MOSFET; annealing; electron mobility; electron traps; hafnium compounds; high-temperature techniques; interface states; nanotechnology; semiconductor device reliability; stability; 0.95 nm; 0.95-nm EOT fabrication; 950 C; HfN; HfN-HfO2-gated nMOSFET; HfO2; HfO2 gate dielectric; HfO2 layer; bulk traps charge density; drain activation annealing; high electron effective mobility; high-temperature gate-first process; high-temperature source; interfacial charge; nMOS transistor; positive constant voltage stress; robust electrical stability; sub-1-nm equivalent oxide thickness; Annealing; Electron mobility; Hafnium oxide; Laboratories; MOSFET circuits; Robust stability; Silicon; Stress; Student members; Voltage; instability of; mobility; nMOS transistor; sub-1-nm equivalent oxide thickness (EOT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.845496
