DocumentCode
745601
Title
Frequency dependence of glass encapsulated electrometer resistors
Author
Price, J.C.
Author_Institution
Dept. of Phys., Colorado Univ., Boulder, CO, USA
Volume
38
Issue
9
fYear
2002
fDate
4/25/2002 12:00:00 AM
Firstpage
413
Lastpage
415
Abstract
The frequency dependence of the resistance of commercial 1-1000 GΩ electrometer resistors has been measured from 30 Hz to 30 kHz. When scaled appropriately, the data for devices of similar geometry fall on a single curve, indicating that the frequency dependence is due to distributed capacitance, rather than to frequency dependence of the resistivity. The results are important for understanding noise performance when these devices are used as gate bias resistors in low-noise junction field effect transistor circuits
Keywords
capacitance; electric resistance; electrometers; resistors; 1 to 1000 Gohm; 30 Hz to 30 kHz; distributed capacitance; frequency dependence; gate bias resistors; glass encapsulated electrometer resistors; low-noise junction field effect transistor circuits; noise performance; precision transformer ratio bridge; resistance drop; scaling behaviour; sheet resistance; single curve;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020298
Filename
1001545
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