Title :
Frequency dependence of glass encapsulated electrometer resistors
Author_Institution :
Dept. of Phys., Colorado Univ., Boulder, CO, USA
fDate :
4/25/2002 12:00:00 AM
Abstract :
The frequency dependence of the resistance of commercial 1-1000 GΩ electrometer resistors has been measured from 30 Hz to 30 kHz. When scaled appropriately, the data for devices of similar geometry fall on a single curve, indicating that the frequency dependence is due to distributed capacitance, rather than to frequency dependence of the resistivity. The results are important for understanding noise performance when these devices are used as gate bias resistors in low-noise junction field effect transistor circuits
Keywords :
capacitance; electric resistance; electrometers; resistors; 1 to 1000 Gohm; 30 Hz to 30 kHz; distributed capacitance; frequency dependence; gate bias resistors; glass encapsulated electrometer resistors; low-noise junction field effect transistor circuits; noise performance; precision transformer ratio bridge; resistance drop; scaling behaviour; sheet resistance; single curve;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020298
