Title :
On-State Characteristics of SiC power UMOSFETs on 115-μm drift Layers
Author :
Sui, Y. ; Tsuji, T. ; Cooper, J.A., Jr.
Author_Institution :
Comput. Eng. & the Birck Nanotechnology Center, Purdue Univ., West Lafayette, IN, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115-μm-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV. An on-state current density of 137 A/cm2 and specific on-resistance of 228 m/spl Omega//spl middot/cm2 are achieved at a gate bias of 40 V (oxide field of 2.67 MV/cm). The effect of current spreading on the specific on-resistance for finite-dimension devices is investigated, and appropriate corrections are made.
Keywords :
high-voltage engineering; power MOSFET; silicon compounds; wide band gap semiconductors; 115 micron; 115-/spl mu/m drift layers; 40 V; 4H-SiC epilayers; H-SiC; SiC power UMOSFET; finite-dimension devices; high voltage; on-state characteristics; on-state current density; power transistors; silicon carbide; specific on-resistance; trench oxide-protected SiC UMOSFET; wide bandgap; Annealing; Contacts; Current density; Implants; MOSFETs; Oxidation; Photonic band gap; Power transistors; Silicon carbide; Voltage; High voltage; power transistors; silicon carbide; wide bandgap;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.845495
